The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Nov. 26, 2004
Applicant:
Raymond J. E. Hueting, Hengelo, NL;
Inventor:
Raymond J. E. Hueting, Hengelo, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a trench MOSFET with drain (), sub-channel region () body () and source (). The sub-channel region is doped to be the same conductivity type as the body (), but of lower doping density. A field plate electrode () is provided adjacent to the sub-channel region ()and a gate electrode () next to the body ().