The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Mar. 27, 2006
Rainer Hagenbeck, Putzbrunn, DE;
Christoph Ludwig, Langebrueck, DE;
Mark Isler, Dresden, DE;
Elard Stein Von Kamienski, Dresden, DE;
Rainer Hagenbeck, Putzbrunn, DE;
Christoph Ludwig, Langebrueck, DE;
Mark Isler, Dresden, DE;
Elard Stein von Kamienski, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A charge-trapping device includes a field effect transistor, which has source and drain regions. The source and drain regions have a dopant concentration profile, which has a gradient each in a vertical and a lateral direction with respect to a surface of a semiconductor substrate. The gradient in the lateral direction towards a depletion region of the transistor is larger than the gradient in the vertical direction towards a well region.