The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Apr. 01, 2004
Doo Hyeb Yoon, Daejon, KR;
Hyun Tak Kim, Daejon, KR;
Byung Gyu Chae, Daejon, KR;
Kwang Yong Kang, Daejon, KR;
Sung Lyul Maeng, Chungcheongbuk-Do, KR;
Doo Hyeb Yoon, Daejon, KR;
Hyun Tak Kim, Daejon, KR;
Byung Gyu Chae, Daejon, KR;
Kwang Yong Kang, Daejon, KR;
Sung Lyul Maeng, Chungcheongbuk-Do, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VOthat changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile