The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Aug. 27, 2004
Connie Pin-chin Wang, Menlo Park, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Wen Yu, Fremont, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Keizaburo Yoshie, Cupertino, CA (US);
Connie Pin-Chin Wang, Menlo Park, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Wen Yu, Fremont, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Keizaburo Yoshie, Cupertino, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor component having a titanium silicide contact structure and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a semiconductor substrate. An opening having sidewalls is formed in the dielectric layer and exposes a portion of the semiconductor substrate. Titanium silicide is disposed on the dielectric layer, sidewalls, and the exposed portion of the semiconductor substrate. The titanium silicide may be formed by disposing titanium on the dielectric layer, sidewalls, and exposed portion of the semiconductor substrate and reacting the titanium with silane. Alternatively, the titanium silicide may be sputter deposited. A layer of titanium nitride is formed on the titanium silicide. A layer of tungsten is formed on the titanium nitride. The tungsten, titanium nitride, and titanium silicide are polished to form the contact structures.