The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Mar. 07, 2006
Lee M Nicholson, Katonah, NY (US);
Wei-tsu Tseng, Hopewell Junction, NY (US);
Christy S Tyberg, Mahopac, NY (US);
Lee M Nicholson, Katonah, NY (US);
Wei-Tsu Tseng, Hopewell Junction, NY (US);
Christy S Tyberg, Mahopac, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An electrical interconnect structure on a substrate, which includes: a first low-k dielectric layer; a spin-on low k CMP protective layer that is covalently bonded to the first low-k dielectric layer; and a CVD deposited hardmask/CMP polish stop layer is provided. Electrical vias and lines can be formed in the first low k dielectric layer. The spin-on low k CMP protective layer prevents damage to the low k dielectric which can be created due to non-uniformity in the CMP process from center to edge or in areas of varying metal density. The thickness of the low-k CMP protective layer can be adjusted to accommodate larger variations in the CMP process without significantly impacting the effective dielectric constant of the structure.