The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
May. 25, 2005
Josine Loo, Leuven, BE;
Youri Ponomarev, Leuven, BE;
Josine Loo, Leuven, BE;
Youri Ponomarev, Leuven, BE;
NXP B.V., Eindhoven, NL;
Abstract
A method of fabricating a dual-gate semiconductor device is provided in which silicidation of the source and drain contact regions () is carried out after the first gate () is formed on part of a first surface () of a silicon body () but before forming a second gate () on a second surface () of the silicon body which is opposite the first surface. The first gate () serves as a mask to ensure that the silicided source and drain contact regions are aligned with the silicon channel (). Moreover, by carrying out the silicidation at an early stage in the fabrication, the choice of material for the second gate is not limited by any high-temperature processes. Advantageously, the difference in material properties at the second surface of the silicon body resulting from silicidation enables the second gate to be aligned laterally between the silicide source and drain contact regions.