The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2008

Filed:

Nov. 10, 2005
Applicants:

Dai Yun Lee, Uiwang-si, KR;

Yong IN Park, Anyang-si, KR;

Inventors:

Dai Yun Lee, Uiwang-si, KR;

Yong In Park, Anyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein are a poly type thin film transistor substrate and a fabricating method thereof, which can reduce the number of processing steps without any process defects. The poly type thin film transistor substrate comprises forming transparent lower conductive layer and upper conductive layers on a substrate; forming a photo-resist pattern on the upper conductive layer; patterning the upper conductive layer by using the photo-resist pattern as a mask; ashing the photo-resist pattern so as to remain on the upper conductive layer; patterning the lower conductive layer by a dry etching method using the patterned upper conductive layer as a mask; and removing the remaining photo-resist pattern.


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