The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Sep. 07, 2004
Seung-bum Hong, Seongnam-si, KR;
Sung-dong Kim, Seongnam-si, KR;
Ju-hwan Jung, Seoul, KR;
Dong-ki Min, Seoul, KR;
Hong-sik Park, Seoul, KR;
Kyoung-lock Baeck, Busan-si, KR;
Chul-min Park, Suwon-si, KR;
Yun-seok Kim, Namyangju-si, KR;
Seung-bum Hong, Seongnam-si, KR;
Sung-dong Kim, Seongnam-si, KR;
Ju-hwan Jung, Seoul, KR;
Dong-ki Min, Seoul, KR;
Hong-sik Park, Seoul, KR;
Kyoung-lock Baeck, Busan-si, KR;
Chul-min Park, Suwon-si, KR;
Yun-seok Kim, Namyangju-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.