The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Sep. 20, 2005
Sang-gab Kim, Seoul, KR;
Shi-yul Kim, Yongin-si, KR;
Hong-sick Park, Suwon-si, KR;
Hee-hwan Choe, Incheon, KR;
Hong-kee Chin, Suwon-si, KR;
Min-seok OH, Yongin-si, KR;
Sang-Gab Kim, Seoul, KR;
Shi-Yul Kim, Yongin-si, KR;
Hong-Sick Park, Suwon-si, KR;
Hee-Hwan Choe, Incheon, KR;
Hong-Kee Chin, Suwon-si, KR;
Min-Seok Oh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor.