The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Feb. 14, 2007
Vishnu K. Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A improved MOSFET () has a source () and drain () in a semiconductor body (), surmounted by an insulated control gate () located over the body () between the source () and drain () and adapted to control a conductive channel () extending between the source () and drain (). The insulated gate () is perforated by a series of openings () through which highly doped regions () in the form of a series of (e.g., square) dots () of the same conductivity type as the body () are provided, located in the channel (), spaced apart from each other and from the source () and drain (). These channel dots () are desirably electrically coupled to a highly doped contact () to the body (). The resulting device () has a greater SOA, higher breakdown voltage and higher HBM stress resistance than equivalent prior art devices () without the dotted channel. Threshold voltage is not affected.