The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Mar. 26, 2007
Applicants:
Ho-nyeon Lee, Yongin-si, KR;
Ick-hwan Ko, Yongin-si, KR;
Inventors:
Ho-nyeon Lee, Yongin-si, KR;
Ick-hwan Ko, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a method of manufacturing a gate insulator and a thin film transistor ('TFT') incorporating the gate insulator, including forming an oxygen-containing, conductive gate on a substrate; forming a gate insulator material layer on the substrate so as to cover the gate; and applying a heat treatment so as to diffuse oxygen from the oxygen-containing gate layer into the gate insulating material layer thereby forming the gate insulator.