The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Aug. 01, 2007
Chuan-yi Wu, Taipei, TW;
Chin-chuan Lai, Bade, TW;
Yung-chia Kuan, Taipei, TW;
Wei-jen Tai, Dongshih Township, Chiayi County, TW;
Chuan-Yi Wu, Taipei, TW;
Chin-Chuan Lai, Bade, TW;
Yung-Chia Kuan, Taipei, TW;
Wei-Jen Tai, Dongshih Township, Chiayi County, TW;
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Abstract
A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.