The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Dec. 21, 2004
Sung-kwon Lee, Kyoungki-do, KR;
Tae-woo Jung, Kyoungki-do, KR;
Min-suk Lee, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Abstract
The present invention is a method for testing a contact open capable of effectively testing a contact open defect in an In-line as securing a mass productivity. The method includes the steps of: performing a photolithography process for forming a contact; forming a contact hole by performing a contact etching process after sampling at least one wafer; depositing a conductive layer on the wafer provided with the contact hole; isolating the conductive layer within the contact hole; performing a test for testing a contact open interface to check whether a remaining layer is existed in an interface between the conductive layer and a lower structure of the conductive layer; and performing a process for etching the contact of a main lot based on a test result.