The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Dec. 06, 2006
David A. Rothenbury, Garland, TX (US);
David A. Rothenbury, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include forming a first mirror layer over and within one or more openings in a sacrificial spacer layer, and forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings. The method may further include subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings, and forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.