The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Feb. 14, 2005
Applicants:
Masayuki Higuchi, Kanagawa, JP;
Satoshi Murakami, Kanagawa, JP;
Misako Nakazawa, Kanagawa, JP;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); G02F 1/13 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
An AMLCD having high fineness and high contrast is realized. First, an interlayer film is provided on an element electrode, and an opening portion is formed in the interlayer film. Next, after a first metal layer is formed, an embedded insulating layer is formed. The embedded insulating layer is retreated by a means, such as an etch back method, to realize a state in which only the opening portion is filled with the embedded insulating layer. By this, electric connection between the element electrode and a second metal layer becomes possible while keeping the flatness.