The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Mar. 10, 2006
Applicant:
Hirofumi Saito, Kanagawa, JP;
Inventor:
Hirofumi Saito, Kanagawa, JP;
Assignee:
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device, an insulating layer formed on a substrate and a wiring pattern layer is formed on the insulating layer. A lower mark element is defined as a groove formed in the insulating layer, and defines an overlay mark in conjunction with an upper mask element formed in a photoresist pattern coated on the insulating layer for the formation of the wiring pattern layer. The lower mark element features a width falling within a range from approximately 4 to 6 μm, and a depth of at most 1 μm.