The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Feb. 18, 2004
Shin Sugawara, Yohkaichi, JP;
Atsuo Hatate, Yohkaichi, JP;
Akiko Komoda, Yohkaichi, JP;
Hisao Arimune, Yohkaichi, JP;
Shin Sugawara, Yohkaichi, JP;
Atsuo Hatate, Yohkaichi, JP;
Akiko Komoda, Yohkaichi, JP;
Hisao Arimune, Yohkaichi, JP;
Kyocera Corporation, Kyoto, JP;
Abstract
There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particlesdeposited on the substrate; second conductivity-type semiconductor layersformed on the crystalline semiconductor particles; an insulator layerformed among the crystalline semiconductor particles; and an upper electrode layerformed on the second conductivity-type semiconductor layers, wherein the second conductivity-type semiconductor layerseach have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layersinclude an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.