The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Aug. 18, 2006
Paul D. Brabant, Phoenix, AZ (US);
Joseph P. Italiano, Phoenix, AZ (US);
Chantal J. Arena, Mesa, AZ (US);
Pierre Tomasini, Phoenix, AZ (US);
Ivo Raaijmakers, Bilthoven, NL;
Matthias Bauer, Riederich, DE;
Paul D. Brabant, Phoenix, AZ (US);
Joseph P. Italiano, Phoenix, AZ (US);
Chantal J. Arena, Mesa, AZ (US);
Pierre Tomasini, Phoenix, AZ (US);
Ivo Raaijmakers, Bilthoven, NL;
Matthias Bauer, Riederich, DE;
ASM America, Inc., Phoenix, AZ (US);
Abstract
Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.