The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Mar. 21, 2006
Sang-hun Jeon, Seoul, KR;
Kyu-sik Kim, Suwon-si, KR;
Chung-woo Kim, Suwon-si, KR;
Sung-ho Park, Seongnam-si, KR;
Yo-sep Min, Yongin-si, KR;
Jeong-hee Han, Suwon-si, KR;
Sang-hun Jeon, Seoul, KR;
Kyu-sik Kim, Suwon-si, KR;
Chung-woo Kim, Suwon-si, KR;
Sung-ho Park, Seongnam-si, KR;
Yo-sep Min, Yongin-si, KR;
Jeong-hee Han, Suwon-si, KR;
Abstract
In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide layer on a semiconductor substrate; annealing the semiconductor substrate including the tunneling oxide layer, the charge storing layer, and the blocking oxide layer under a gas atmosphere so that the blocking oxide layer has a negative fixed oxide charge; forming a gate electrode on the blocking oxide layer with the negative fixed oxide charge and etching the tunneling oxide layer, the charge storing layer, and the blocking oxide layer to form a gate structure; and forming a first doped region and a second doped region in the semiconductor substrate at sides of the gate structure by doping the semiconductor substrate with a dopant.