The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2008

Filed:

Sep. 30, 2004
Applicants:

Hyunsoo Shin, Seoul, KR;

Kyusung Kim, Seoul, KR;

Inventors:

Hyunsoo Shin, Seoul, KR;

Kyusung Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for forming a field effect transistor are disclosed. An illustrated method comprises: forming a gate electrode on a substrate; and forming a nitride layer on at least a part of the gate electrode and the substrate.


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