The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
May. 06, 2005
Youn-sub Lim, Chungcheongbuk-do, KR;
Youn-Sub Lim, Chungcheongbuk-do, KR;
MagnaChip Semiconductor, Ltd., Chungcheonbuk-Do, KR;
Abstract
A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n-type ion implantation region for a photodiode beneath a surface of the semiconductor substrate, the first n-type ion implantation region being aligned at one side of the transfer gate and having a first width and a first ion implantation depth; forming a second n-type ion implantation region aligned at one side of the transfer gate, the second n-type ion implantation region enclosing the first n-type ion implantation region and having a second width wider than the first width and a second ion implantation depth deeper than the first ion implantation depth and a second depth; forming a p-type ion implantation region between a surface of the semiconductor substrate and the first n-type ion implantation region, the p-type ion implantation region being aligned at one side of the transfer gate and partially overlapped with the first n-type ion implantation region; forming spacers on both sidewalls of the transfer gate; and forming a floating diffusion region at the other side of the transfer gate.