The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Apr. 23, 2004
Wei-wei Zhuang, Vancouver, WA (US);
Tingkai LI, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Wei-Wei Zhuang, Vancouver, WA (US);
Tingkai Li, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method is provided for forming a PrCaMnO(PCMO) thin film with crystalline structure-related memory resistance properties. The method comprises: forming a PCMO thin film with a first crystalline structure; and, changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure. In one aspect the first crystalline structure is either amorphous or a weak-crystalline. Then, the resistance state of the PCMO film is changed in response to unipolar pulses. In another aspect, the PCMO thin film has either a polycrystalline structure. Then, the resistance state of the PCMO film changes in response to bipolar pulses.