The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Aug. 23, 2005
Hiroshi Fukuda, Tokyo, JP;
Tsukasa Fujimori, Kokubunji, JP;
Natsuki Yokoyama, Mitaka, JP;
Yuko Hanaoka, Kodaira, JP;
Takafumi Matsumura, Hitachinaka, JP;
Hiroshi Fukuda, Tokyo, JP;
Tsukasa Fujimori, Kokubunji, JP;
Natsuki Yokoyama, Mitaka, JP;
Yuko Hanaoka, Kodaira, JP;
Takafumi Matsumura, Hitachinaka, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.