The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Jul. 05, 2006
Applicant:
Kyoung-tae Kim, Yongin-si, KR;
Inventor:
Kyoung-Tae Kim, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
An apparatus and a method for reducing drain modulation in a high power amplifier are provided, in which an adder supplies a current corresponding to a voltage reduced by a drain modulation, and a bias unit adds the current supplied from the adder to a DC bias and supplies the added current to a drain of a transistor. Accordingly, the drain modulation occurring in the transistor can be minimized and an output characteristic of the high power transistor can be improved.