The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Jun. 30, 2006
Applicants:
Wei Gao, Vancouver, WA (US);
Yoshi Ono, Camas, WA (US);
Assignee:
Sharp Laboratories of America, Inc., Camas, WA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.
Gao, Wei. (2008). Conductive niobium oxide gate mosfet (U.S. Patent No. 7400020). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7400020
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile