The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Dec. 19, 2005
Syotaro Ono, Yokohama, JP;
Yusuke Kawaguchi, Kanagawa-ken, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Hirobumi Matsuki, Hyogo-ken, JP;
Kiyotaka Arai, Hyogo-ken, JP;
Syotaro Ono, Yokohama, JP;
Yusuke Kawaguchi, Kanagawa-ken, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Hirobumi Matsuki, Hyogo-ken, JP;
Kiyotaka Arai, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A power MOSFET includes an n-type drift layer and a p-type base layer formed in a layered manner on the n-type drift layer. Trench gates are formed to penetrate the p-type base layer to reach the n-type drift layer. On the p-type base layer, n-type source regions and p-type regions are formed. These n-type source regions and p-type regions are arranged alternately along a longitudinal direction of the trench gates. The n-type source regions and the p-type regions are arranged with a slant with respect to the longitudinal direction of the trench gates.