The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Jan. 10, 2005
Applicants:
Brendan John Roycroft, County Cork, IE;
Pleun Pieter Maaskant, Cork, IE;
Inventors:
Brendan John Roycroft, County Cork, IE;
Pleun Pieter Maaskant, Cork, IE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
An initial epitaxial layer of GaN is grown on a sapphire substrate. The epitaxial layer is then etched in a reactive ion etch (RIE) chamber. This etching acts preferentially at defects, causing them to become enlarged cavities. The cavities are too large in proportion to the crystal lattice to act as defects in the usual sense, and so a further GaN epitaxial layer fills into the cavities. Thus, propagation of defects is avoided.