The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2008

Filed:

Jun. 10, 2005
Applicants:

James Gregory Couillard, Ithaca, NY (US);

Kishor Purushottam Gadkaree, Big Flats, NY (US);

Joseph Frank Mach, Lindley, NY (US);

Inventors:

James Gregory Couillard, Ithaca, NY (US);

Kishor Purushottam Gadkaree, Big Flats, NY (US);

Joseph Frank Mach, Lindley, NY (US);

Assignee:

Corning Incorporated, Corning, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.


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