The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Oct. 07, 2005
Ken-ichi Yanai, Kawasaki, JP;
Yoshio Nagahiro, Kawasaki, JP;
Kazushige Hotta, Kawasaki, JP;
Koji Ohgata, Sagamihara, JP;
Yasuyoshi Mishima, Kawasaki, JP;
Nobuo Sasaki, Kawasaki, JP;
Ken-ichi Yanai, Kawasaki, JP;
Yoshio Nagahiro, Kawasaki, JP;
Kazushige Hotta, Kawasaki, JP;
Koji Ohgata, Sagamihara, JP;
Yasuyoshi Mishima, Kawasaki, JP;
Nobuo Sasaki, Kawasaki, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of making a thin film transistor device, including forming and patterning a semiconductor film to form first and second semiconductor films in, respectively, low-voltage driven and high-voltage driven thin film transistor formation regions. The method also includes forming a first insulating film on the first and second semiconductor films, and forming a first gate electrode on the first insulating film in the low-voltage driven thin film transistor formation region. Additionally, a second insulating film is formed on the entire surface of the resultant structure above the substrate, and a second gate electrode is formed on the second insulating film in the high-voltage driven thin film transistor formation region. The method also includes etching the first and second insulating films, thus forming first and second gate insulating films below, respectively, the first and second gate electrodes, with the second gate insulating film being wider than the second gate electrode.