The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Mar. 06, 2006
Applicants:
Ming-chang Lin, Atlanta, GA (US);
Tsun-neng Yang, Taipei, TW;
Shan-ming Lan, Daxi Town, TW;
Tsong-yang Wei, Taipei, TW;
Jyh-perng Chiu, Dongshan Shiang, TW;
Wei-yang MA, Banqiao, TW;
Inventors:
Ming-Chang Lin, Atlanta, GA (US);
Tsun-Neng Yang, Taipei, TW;
Shan-Ming Lan, Daxi Town, TW;
Tsong-Yang Wei, Taipei, TW;
Jyh-Perng Chiu, Dongshan Shiang, TW;
Wei-Yang Ma, Banqiao, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.