The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Sep. 08, 2004
Mitchell Gene Dibbs, Midland, MI (US);
Michael Inbasekaran, Midland, MI (US);
Paul Henson Townsend, Iii, Mesa, AZ (US);
Kenneth L. Foster, Brighton, MI (US);
Shaoguang S. Feng, Midland, MI (US);
David J. Brennan, Midland, MI (US);
Q. Jason Niu, Midland, MI (US);
James P. Godschalx, Midland, MI (US);
Dean M. Welsh, Midland, MI (US);
Ray E. Drumright, Midland, MI (US);
Mitchell Gene Dibbs, Midland, MI (US);
Michael Inbasekaran, Midland, MI (US);
Paul Henson Townsend, III, Mesa, AZ (US);
Kenneth L. Foster, Brighton, MI (US);
Shaoguang S. Feng, Midland, MI (US);
David J. Brennan, Midland, MI (US);
Q. Jason Niu, Midland, MI (US);
James P. Godschalx, Midland, MI (US);
Dean M. Welsh, Midland, MI (US);
Ray E. Drumright, Midland, MI (US);
Dow Global Technologies Inc., Midland, MI (US);
Abstract
The present invention relates to a method for preparing polymeric films, preferably electroactive films, with enhanced physical properties by the steps of applying to a substrate a solution of a polymer containing pendant labile solubilizing groups, then removing the solvent and a sufficient concentration of the labile solubilizing groups render the polymer less soluble in the solvent than before the labile groups were removed. It is believed that the removal of pendant soluble groups a) permits optimization of the semiconducting backbone for charge transport performance, b) allows direct control of microstructure in the final film, and c) renders the final film more robust during subsequent process steps needed to construct multilayer devices.