The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Jul. 14, 2003
Jaehwan Eun, Jeonju-si, KR;
Sang-goo Lee, Siheung-si, KR;
Hyeongjoon Kim, Seongnam-si, KR;
Minchan Kim, Jeju-si, KR;
Jaehwan Eun, Jeonju-si, KR;
Sang-Goo Lee, Siheung-si, KR;
Hyeongjoon Kim, Seongnam-si, KR;
Minchan Kim, Jeju-si, KR;
Ibule Photonics, Inc., , KR;
Abstract
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile