The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
May. 03, 2006
Kunihiko Nishimura, Tokyo, JP;
Naoki Yasuda, Tokyo, JP;
Yosuke Suzuki, Tokyo, JP;
Yoshinobu Hirokado, Tokyo, JP;
Satoru Kawamoto, Tokyo, JP;
Kunihiko Nishimura, Tokyo, JP;
Naoki Yasuda, Tokyo, JP;
Yosuke Suzuki, Tokyo, JP;
Yoshinobu Hirokado, Tokyo, JP;
Satoru Kawamoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The step of forming an opening in an insulating layer to expose a carbon nanotube layer is performed using two types of dry etching different from each other in conditions. In the first-stage dry etching step, a hole is formed in the insulating layer to such a depth as not exposing the carbon nanotube layer. Thereafter, in the second-stage dry etching step, a bottom surface portion of the hole is removed, thus exposing an upper surface of the carbon nanotube layer. A method of manufacturing an electron emission source capable of improving performance of an electron emission portion is thus obtained.