The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Jun. 07, 2006
Hidehiro Shiga, Kamakura, JP;
Shinichiro Shiratake, Yokohama, JP;
Daisaburo Takashima, Yokohama, JP;
Hidehiro Shiga, Kamakura, JP;
Shinichiro Shiratake, Yokohama, JP;
Daisaburo Takashima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A ferroelectric memory device includes a cell block, a bit line, and a plate line. The cell block includes a ferroelectric capacitor and a transistor switch. The bit line applies a voltage to one electrode of the ferroelectric capacitor. The plate line applies a voltage to the other electrode of the ferroelectric capacitor. In a read operation of data, a first voltage is applied to the plate line. In a write operation of data, a second voltage different from the first voltage is applied to the plate line, and a voltage which is higher or lower than the second voltage is applied to the bit line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile