The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Jan. 30, 2006
Tomoaki Nakao, Yamatokoriyama, JP;
Tomoaki Nakao, Yamatokoriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A P-channel MOS transistor and an N-channel MOS transistor are respectively controlled by a first control signal and a second control signal. The first control signal CTLand the second control signal CTLare independent from each other. The second control signal CTLis generated by a NOR circuitto which a data signal DATA and a third control signal CTLare inputted. A load capacitor Cwhich samples the first electric potential or the GND electric potential is configured by a gate capacitance of another MOS transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile