The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2008

Filed:

Apr. 27, 2006
Applicants:

Louis Lu-chen Hsu, Fishkill, NY (US);

Edward R. Pillai, Wappingers Falls, NY (US);

Joseph Natonio, Wappingers Falls, NY (US);

James D. Rockrohr, Hopewell Junction, NY (US);

David R. Hanson, Brewster, NY (US);

Inventors:

Louis Lu-Chen Hsu, Fishkill, NY (US);

Edward R. Pillai, Wappingers Falls, NY (US);

Joseph Natonio, Wappingers Falls, NY (US);

James D. Rockrohr, Hopewell Junction, NY (US);

David R. Hanson, Brewster, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A universal leakage monitoring system (ULMS) to measure a plurality of leakage macros during the development of a manufacturing process or a normal operation period. The ULMS characterizes the leakage of both n-type and p-type CMOS devices on the gate dielectric leakage, the sub-threshold leakage, and the reverse biased junction leakage, and the like. Testing is performed sequentially from the first test macro up to the last test macro using an on-chip algorithm. When the last test macro is tested, it scans the leakage data out.


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