The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Mar. 11, 2005
Torkel Arnborg, Stockholm, SE;
Torkel Arnborg, Stockholm, SE;
Infineon Technologies AG, Munich, DE;
Abstract
A monolithically integrated bipolar transistor has an SOI substrate, a collector region in the SOI substrate, a base layer region on top of and in contact with the collector region, and an emitter layer region on top of and in contact with the base layer region, wherein the collector, base layer, and emitter layer regions are provided with separate contact regions. Further, a region of an insulating material, preferably an oxide or nitride, is provided in the base layer region, in the emitter layer region, or between the base and emitter layer regions, wherein the insulating region extends laterally at a fraction of a width of the base and emitter layer regions to reduce an effective width of the bipolar transistor to thereby eliminate any base push out effects that would otherwise occur.