The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Mar. 27, 2006
Ira Naot, Migdal Haemek, IL;
Yaron Blecher, Migdal Haemek, IL;
Ira Naot, Migdal Haemek, IL;
Yaron Blecher, Migdal Haemek, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high frequency differential input signal across first and second pads. The lateral bipolar transistor includes an n-type emitter coupled to the first pad and an n-type collector coupled to the second pad. The emitter and collector are located in a p-well, which forms the base of the transistor. The p-well is located in an isolating n-well, which in turn, is located in a p-type substrate. The n-well is coupled to receive the Vsupply voltage and the p-substrate is coupled to a Vreference voltage. A dielectric region can be located between the emitter and collector (in the p-well).