The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Sep. 19, 2005
Applicants:
Bruce H. T. Chai, Oviedo, FL (US);
David Y. Chai, Oviedo, FL (US);
Randall A. Lux, Fern Park, FL (US);
Inventors:
Bruce H. T. Chai, Oviedo, FL (US);
David Y. Chai, Oviedo, FL (US);
Randall A. Lux, Fern Park, FL (US);
Assignee:
Crystal Photonics, Incorporated, Sanford, FL (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for enhancing the light yield of a doped scintillation crystal may include a reducing step if the crystal includes a dopant, such as cerium in a first oxidation state, such as the 4+ state. The scintillation crystal may include a rare earth silicate. The reducing may include heating in an oxygen-free ambient. The reducing may be used after an oxygen vacancy filling step that causes at least some of the dopant to increase in its oxidation state.