The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Jun. 23, 2004
Kyoung-seok Kim, Seoul, KR;
Hong-bae Park, Seoul, KR;
Bong-hyun Kim, Incheon Metropolitan, KR;
Sung-tae Kim, Seoul, KR;
Jong-wan Kwon, Gyeonggi-do, KR;
Jung-hyun Lee, Gyeonggi-do, KR;
Ki-chul Kim, Gyeonggi-do, KR;
Jae-soon Lim, Seoul, KR;
Gab-jin Nam, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Kyoung-seok Kim, Seoul, KR;
Hong-bae Park, Seoul, KR;
Bong-hyun Kim, Incheon Metropolitan, KR;
Sung-tae Kim, Seoul, KR;
Jong-wan Kwon, Gyeonggi-do, KR;
Jung-hyun Lee, Gyeonggi-do, KR;
Ki-chul Kim, Gyeonggi-do, KR;
Jae-soon Lim, Seoul, KR;
Gab-jin Nam, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.