The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2008

Filed:

Aug. 29, 2006
Applicants:

Kentaro Watanabe, Kawasaki, JP;

Koichi Sato, Yokohama, JP;

Takayuki Hiraoka, Kawasaki, JP;

Inventors:

Kentaro Watanabe, Kawasaki, JP;

Koichi Sato, Yokohama, JP;

Takayuki Hiraoka, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrostatic protection circuit including: a first power supply terminal; a second power supply terminal; an input-output terminalfor an external connection; a P-type MOSFET for a bufferfor pulling up input and output to a high-level potential; an N-type MOSFET for the bufferfor pulling down the input and output to a low-level potential; a rectifying elementconnected between the first and second power supply terminals; a detectorfor comparing the potential of the input-output terminalto the potential of the first power supply terminalto detect whether or not an electrostatic surge is flowing in; and controllersand, wherein the controllersandcontrol a gate potential of the N-type MOSFETfor the buffer when the detectordetects inflow of the electrostatic surge and turn off the N-type MOSFETfor the buffer. Discharge of the electrostatic surge is performed through a parasitic bipolar junction transistorformed on the N-type MOSFET


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