The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Mar. 29, 2005
Christelle Rochefort, Crolles, FR;
Erwin A. Hijzen, Blanden, BE;
Philippe Meunier-beillard, Bertem, BE;
Christelle Rochefort, Crolles, FR;
Erwin A. Hijzen, Blanden, BE;
Philippe Meunier-Beillard, Bertem, BE;
NXP B.V., Eindhoven, NL;
Abstract
Consistent with an example embodiment, a reduced surface field effect type (RESURF) semiconductor device is manufactured having a drift region over a drain region. Trenches are formed through openings in mask. A trench insulating layer is deposited on the sidewalls and base of the trenches followed by an overetching step to remove the trench insulating layer from the base of the trenches as well as the top of the sidewalls of the trenches adjacent to the first major surface leaving exposed silicon at the top of the sidewalls of the trench and the base of the trenches. Silicon is selectively grown plugging the trenches with silicon plug () leaving void.