The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Aug. 31, 2005
Vladislav Vashchenko, Palo Alto, CA (US);
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
In an ESD protection structure, dual direction ESD protection is provided by forming an n-well isolation ring around an NMOS device so that the p-well in which the NMOS drain is formed is isolated from the underlying p-substrate by the n-well isolation ring. By forming the n-well isolation ring the p-n-p-n structure of an embedded SCR for reverse ESD protection is provided. The width of the n-well isolation ring and its spacing from the NMOS drain are adjusted to provide the desired SCR parameters.