The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Dec. 15, 2005
Lars Bach, Ullersdorf, DE;
Lars Bach, Ullersdorf, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor memory () having a plurality of memory cells (), the semiconductor memory () having a substrate (), at least one wordline () and first () and second lines (). Each memory cell () of the plurality of memory cells () includes a fin () of semiconductor material, the fin () having a top surface (), first () and second () opposing sidewalls and first () and second () opposing ends. The fin () extends along a first direction (X). Each memory cell () also includes a charge-trapping layer () disposed on the first () and second () sidewalls of said fin (), a patterned first insulating layer () disposed on the top surface () of the fin (), wherein the first insulating layer () abuts the top surface () of the fin () and the charge-trapping layer (). Each memory cell () also includes a first doping region () coupled to the first end () of said fin () and a second doping region () coupled to the second end () of the fin ().