The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2008

Filed:

Sep. 13, 2005
Applicant:

Jennifer Gerbi, Champaign, IL (US);

Inventor:

Jennifer Gerbi, Champaign, IL (US);

Assignee:

UChicago Argonne, LLC, Chicago, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 21/00 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations. A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.


Find Patent Forward Citations

Loading…