The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Dec. 27, 2004
Eun Kyoung Kim, Daejeon-shi, KR;
Sung Q Lee, Daejeon-shi, KR;
Ki Bong Song, Daejeon-shi, KR;
Kang Ho Park, Daejeon-shi, KR;
Eun Kyoung Kim, Daejeon-shi, KR;
Sung Q Lee, Daejeon-shi, KR;
Ki Bong Song, Daejeon-shi, KR;
Kang Ho Park, Daejeon-shi, KR;
Electronics and Telecomunications Research Institute, Daejeon-shi, KR;
Abstract
Provided is a method of fabricating a near-field optical probe adapted to a near-field scanning optical microscopy and a near-field information storage device, in which a cantilever and an optical tip are provided in one body and the optical tip is arranged to face the upper portion of the substrate. High-concentrated boron ions are implanted into an uppermost silicon layer of a silicon on insulator (SOI) substrate, and a silicon layer into which boron ions are implanted while the silicon inside the tip is etched to form the hole to act as an etch stop layer, thereby easily removing the silicon inside the tip even with the cantilever exposed, and simplifying the process due to the simultaneous fabrication of the cantilever and the tip.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile