The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Oct. 11, 2005
Jin Chul Kim, Kyungki-do, KR;
Su Yeol Lee, Kyungki-do, KR;
Chang Zoo Kim, Kyungki-do, KR;
Sang Heon Han, Kyungki-do, KR;
Keun Man Song, Seoul, KR;
Tae Jun Kim, Kyungki-do, KR;
Seok Beom Choi, Daejeon, KR;
Jin Chul Kim, Kyungki-do, KR;
Su Yeol Lee, Kyungki-do, KR;
Chang Zoo Kim, Kyungki-do, KR;
Sang Heon Han, Kyungki-do, KR;
Keun Man Song, Seoul, KR;
Tae Jun Kim, Kyungki-do, KR;
Seok Beom Choi, Daejeon, KR;
Samsung Electro-Mechanics Co., Ltd, Suwon, Kyungki-Do, KR;
Abstract
The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.