The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Nov. 08, 2004
Applicants:
Kenji Kohiro, Tsukuba, JP;
Tomoyuki Takada, Tsukuba, JP;
Inventors:
Kenji Kohiro, Tsukuba, JP;
Tomoyuki Takada, Tsukuba, JP;
Assignee:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal substrate or on an epitaxial layer lattice-matched to the InP single crystal substrate under conditions of ratio of V/: 10-100, growth temperature: 630° C.-700° C., and growth rate: 0.6 μm/h-2 μm/h.