The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Feb. 16, 2004
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Waseda University, Tokyo, JP;
Abstract
A method for growing a β-GaOsingle crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GaOlight-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a β-GaOsingle crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a β-GaOsingle crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin film of a β-GaOsingle crystal is grown on a substrate of a β-GaOsingle crystal A light-emitting device comprises an n-type substrate produced by doping a β-GaOsingle crystal with an n-type dopant and a p-type layer produced by doping the β-GaOsingle crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits a light from the junction portion.