The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7391282 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 24, 2008

Filed:

Nov. 17, 2005
Applicants:

Tadayoshi Nakatsuka, Toyonaka, JP;

Masashi Miyagi, Takatsuki, JP;

Inventors:

Tadayoshi Nakatsuka, Toyonaka, JP;

Masashi Miyagi, Takatsuki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 5/12 (2006.01); H04B 1/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Switch sections composed of a plurality of FETstoandtoconnected in series are provided between input/output terminalsandand ground terminalsand, and between the input/output terminalsto. A plurality of gate bias resistorstotoare also provided. One terminal of each gate bias resistor is connected to a gate electrode of a corresponding one of the FETstoandto, while a control voltageandfor switching an ON state and an OFF state of the switch section is applied to the other terminal. Among the FETs included in each switch section, concerning the FETs, andto which signal power is applied when the switch section is in the OFF state, the gate bias resistors, andconnected to the gate electrodes are set to have a highest resistance value.


Find Patent Forward Citations

Nakatsuka, Tadayoshi. (2008). Radio-frequency switch circuit and semiconductor device (U.S. Patent No. 7391282). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7391282

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